KONSENTRATORLI VERTIKAL GAAS QUYOSH ELEMENTINING SAMARADORLIGINI TEMPERATURAGA BOG‘LIQLIGINI MODELLASHTIRISH
Keywords:
GaAs, vertikal quyosh elementi, temperatura, Sentaurus TCAD, fotovoltaika, konsentrator tizimi, samaradorlikAbstract
Ushbu ishda Sentaurus TCAD dasturi yordamida vertikal yagona o‘tishli galliy arsenid (GaAs) quyosh elementining asosiy parametrlarining temperaturaga bog‘liqligi ikkilik o‘lchamda modellashtirildi. Struktura p+, p, n va n+ qatlamlardan tashkil topgan bo‘lib, ularning konsentratsiyalari mos ravishda 5×10¹⁹ cm⁻³, 2×10¹⁷ cm⁻³, 4×10¹⁶ cm⁻³ va 5×10¹⁹ cm⁻³ qilib olingan. Qurilmaning umumiy qalinligi H = 5 µm etib belgilandi. Yoritish sifatida AM1.5d quyosh standarti (1 suns = 1000 W/m²) qo‘llanilgan. Tadqiqotda temperaturaning ortishi bilan quyosh elementi parametrlarida kuzatiladigan o‘zgarishlar tahlil qilindi. Natijalar shuni ko‘rsatdiki, temperaturaning oshishi elementning samaradorligi va chiqish kuchlanishiga sezilarli ta’sir ko‘rsatadi. Olingan ma’lumotlar vertikal GaAs quyosh elementlarining issiqlik barqarorligini oshirish va yuqori samarali konsentrator tizimlarini yaratishda muhim ahamiyatga ega.
References
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